FDMS86152 Datasheet | Fairchild Semiconductor

FDMS86152 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 100 V, 45 A, 6 mΩ March 2015 Features General Description - Max r DS(on) = 6 mΩ at VGS = 10 V, ID = 14 A - Max r DS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. - MSL1 robust package design - 100% UIL tested - Ro HS pliant Applications - Primary DC-DC MOSFET - Secondary Synchronous Rectifier - Load Switch Top Pin 1 Bottom Pin 1 SSSG DDDD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous...